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RF and Microwave Monolithic Amplifier VNA 25 ( 0.5-2.5 GHz / 18.2dBm )
3V & 5V operation
no external biasing circuit required
internal DC blocking at RF input and output
Gain, 17 dB typ.
wide bandwidth, 0.5 to 2.5 GHz
low noise figure, 5.5 dB typ.
output power, up to +18.2 dBm typ.
buffer amplifier (LO Amplifier)
cellular, Lband, WiFi Amplifier
Function Pin number Description
RF IN 3 RF input pin.
RF OUT 6 RF output pin.
DC 1 Bias pin
Connections to ground. Use via holes as shown in Suggested Layout for PCB
Design to reduce ground path inductance for best performance.
VNA-25 is a wideband amplifi er offering high dynamic range. It has repeatable performance from lot to
lot. It is enclosed in an 8-lead SOIC package. VNA-25+ is fabricated using GaAs MESFET technology.
Expected MTBF at 85°C case temperature is 40,000 years at 2.8V, 2,000 at 5V.