Product Features
3V & 5V operation
no external biasing circuit required
internal DC blocking at RF input and output
Gain, 17 dB typ.
wide bandwidth, 0.5 to 2.5 GHz
low noise figure, 5.5 dB typ.
output power, up to +18.2 dBm typ.
low cost
Typical Applications
buffer amplifier (LO Amplifier)
cellular, Lband, WiFi Amplifier
PCN
Pin Description
Function Pin number Description
RF IN 3 RF input pin.
RF OUT 6 RF output pin.
DC 1 Bias pin
GND 2,4,5,7,8
Connections to ground. Use via holes as shown in Suggested Layout for PCB
Design to reduce ground path inductance for best performance.
General Description
VNA-25 is a wideband amplifi er offering high dynamic range. It has repeatable performance from lot to
lot. It is enclosed in an 8-lead SOIC package. VNA-25+ is fabricated using GaAs MESFET technology.
Expected MTBF at 85°C case temperature is 40,000 years at 2.8V, 2,000 at 5V.
VNA25 Datasheet_1 
Data sheet Minicircuits
Manufacture: Minicircuits
