Product Features
• 3V & 5V operation
• no external biasing circuit required
• internal DC blocking at RF input and output
• Gain, 17 dB typ.
• wide bandwidth, 0.5 to 2.5 GHz
• low noise figure, 5.5 dB typ.
• output power, up to +18.2 dBm typ.
• low cost
Typical Applications
• buffer amplifier (LO Amplifier)
• cellular, Lband, WiFi Amplifier
• PCN
Pin Description
Function Pin number Description
RF IN 3 RF input pin.
RF OUT 6 RF output pin.
DC 1 Bias pin
GND 2,4,5,7,8
Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
General Description
VNA-25 is a wideband amplifi er offering high dynamic range. It has repeatable performance from lot to
lot. It is enclosed in an 8-lead SOIC package. VNA-25+ is fabricated using GaAs MESFET technology.
Expected MTBF at 85°C case temperature is 40,000 years at 2.8V, 2,000 at 5V.
VNA25 Datasheet_1 
Data sheet Minicircuits
Manufacture: Minicircuits
